Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation

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Periodical:

Materials Science Forum (Volumes 255-257)

Edited by:

Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

Pages:

472-474

DOI:

10.4028/www.scientific.net/MSF.255-257.472

Citation:

S. Eichler et al., "Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation", Materials Science Forum, Vols. 255-257, pp. 472-474, 1997

Online since:

September 1997

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$35.00

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