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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Fluence Dependence of the Formation of Open-Volume...

Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

472-474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.472

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Online since:

September 1997

Authors:

S. Eichler, F. Börner, J. Gebauer, Reinhard Krause-Rehberg

Keywords:

Fluence Dependence, Ion Implantation, Silicon, Vacancy Type Defects

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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