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Defect Analysis in Intermetallic Alloys with Positron Annihilation
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Positron Diffusion Trapping Model for Spherical Domains with a Size Distribution
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Study of Irradiation-Induced Vacancy Defects and Shallow Positron Traps in Silicon
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Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons
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Fermi Surface Topology and Helical Magnetic Ordering in Gd-Y Alloys
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Positron Annihilation Studies in CeNiInH_1.60
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Spatial Distribution of Vacancy Defects in GaAs:Te Wafers Studied by Positron Annihilation
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Doppler Broadening of Positron Annihilation Lineshape in Sulphate Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Study of Point Defects in Silicon by Means of...

Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

605-607

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.605

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Online since:

September 1997

Authors:

Jan Kuriplach, T. van Hoecke, B. van Waeyenberge, Charles Dauwe, Danny Segers, N. Balcaen, A.L. Morales, M.-A. Trauwaert, J.R. Richardson, Mojmír Šob

Keywords:

Core Electrons, Defects in Si, Momentum Distribution, Positron Annihilation Spectroscopy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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