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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Spatial Distribution of Vacancy Defects in GaAs:Te...

Spatial Distribution of Vacancy Defects in GaAs:Te Wafers Studied by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

614-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.614

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Online since:

September 1997

Authors:

Anna Cavallini, A. Dupasquier, Gabriel Ferro, J. Piqueras, M. Valli

Keywords:

ECX, GaAs, Impurity-Vacancy Complexes, Vacancies in GaAs

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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