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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Direct Evidence of Fluorine-Related Defects in F+,...

Direct Evidence of Fluorine-Related Defects in F⁺, BF⁺ and BF₂⁺ Implanted Silicon by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

683-685

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.683

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Online since:

September 1997

Authors:

L. Liszkay, E. Kótai, Z. Kajcsos, T. Laine

Keywords:

Defect, Fluorine, Ion Implantation, Positron Beams, Semiconductor, Silicon, Vacancy

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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