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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Characterization of Defects at the Si/SiO2...

Characterization of Defects at the Si/SiO₂ Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

718-720

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.718

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Online since:

September 1997

Authors:

M. Clement, J.M.M. de Nijs, H. Schut, A. van Veen, P. Balk

Keywords:

Implantation Buffer, Interface, MOS System, Poly-Silicon, Positron Annihilation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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