Characterization of Defects at the Si/SiO2 Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons

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Periodical:

Materials Science Forum (Volumes 255-257)

Edited by:

Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

Pages:

718-720

DOI:

10.4028/www.scientific.net/MSF.255-257.718

Citation:

M. Clement et al., "Characterization of Defects at the Si/SiO2 Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons", Materials Science Forum, Vols. 255-257, pp. 718-720, 1997

Online since:

September 1997

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$35.00

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