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Surface Properties of Polymers Studied by Slow Positron Annihilation Spectroscopy
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Experimental Determination of Positron Related Surface Characteristics of 6H-SiC
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Positron Lifetime Study on Semiconductor Thin Films
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Characterization of Defects at the Si/SiO₂ Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons
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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Positron Lifetime Study on Semiconductor Thin...

Positron Lifetime Study on Semiconductor Thin Films

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

714-717

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.714

Citation:

Cite this paper

Online since:

September 1997

Authors:

Ryoichi Suzuki, Toshiyuki Ohdaira, Akira Uedono, Shoji Ishibashi, Akihisa Matsuda, Sadafumi Yoshida, Yuuki Ishida, S. Niki, P.J. Fons, Tomohisa Mikado, T. Yamazaki, Shoichiro Tanigawa, Yang Koo Cho

Keywords:

a-Si:H, CuInSe₂, Fluorine-Ion Implanted Si, Gallium Nitride (GaN), Positron Lifetime Spectroscopy, Silicon Carbide (SiC), Slow Positron Beam, Thin Film

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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