Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement

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Periodical:

Materials Science Forum (Volumes 255-257)

Edited by:

Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

Pages:

701-703

DOI:

10.4028/www.scientific.net/MSF.255-257.701

Citation:

Y. K. Cho et al., "Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement", Materials Science Forum, Vols. 255-257, pp. 701-703, 1997

Online since:

September 1997

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$35.00

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