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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Defect Study of Heavily n-Type Doped III-V...

Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

701-703

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.701

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Online since:

September 1997

Authors:

Yang Koo Cho, J.Y. Leem, C. Lee, S.K. Noh, Ryoichi Suzuki, T. Odaira, Tomohisa Mikado

Keywords:

Double Crystal X-Ray Diffractometry, DX Centers, GaAs, Gallium Nitride (GaN), InGaAs, Lifetime Measurements, Photoluminescence (PL), Pulsed Positron Beams

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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