Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation

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Periodical:

Materials Science Forum (Volumes 294-296)

Edited by:

Pavel Lejcek and Václav Paidar

Pages:

341-344

DOI:

10.4028/www.scientific.net/MSF.294-296.341

Citation:

H. Takagi et al., "Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation", Materials Science Forum, Vols. 294-296, pp. 341-344, 1999

Online since:

November 1998

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$35.00

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