Electronic Structure and Doping Effect of the Σ11(11-3)/[110] Grain Boundary in Ni

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Periodical:

Materials Science Forum (Volumes 294-296)

Edited by:

Pavel Lejcek and Václav Paidar

Pages:

489-492

DOI:

10.4028/www.scientific.net/MSF.294-296.489

Citation:

L.G. Wang and C. Y. Wang, "Electronic Structure and Doping Effect of the Σ11(11-3)/[110] Grain Boundary in Ni", Materials Science Forum, Vols. 294-296, pp. 489-492, 1999

Online since:

November 1998

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$35.00

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