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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Quantum Transport and Minimum Switching Voltage in...

Quantum Transport and Minimum Switching Voltage in a Field-Effect Transistor

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

3-10

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.3

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Online since:

December 1998

Authors:

Magnus Willander, Ying Fu, O. Nilsson

Keywords:

I-V Characteristic, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Minimum Switching Voltage, Quantum Kinetic Wave Transport

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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