Vertical Transport and Current Instabilities in i-GaAs - i-AlAs - n-GaAs Heterostructure Hot Electron Diode at Auger Ionization

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Periodical:

Materials Science Forum (Volumes 297-298)

Edited by:

Steponas Asmontas and Adolfas Dargys

Pages:

345-348

DOI:

10.4028/www.scientific.net/MSF.297-298.345

Citation:

A.M. Belyantsev et al., "Vertical Transport and Current Instabilities in i-GaAs - i-AlAs - n-GaAs Heterostructure Hot Electron Diode at Auger Ionization", Materials Science Forum, Vols. 297-298, pp. 345-348, 1999

Online since:

December 1998

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