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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298THz Frequency Power Generation Possibility due to...

THz Frequency Power Generation Possibility due to Nonparabolicity in n⁺- n - n⁺ 4H-SiC Structures

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

337-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.337

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Online since:

December 1998

Authors:

Viktor Gružinskis, Jian Hui Zhao, P. Shiktorov, E. Starikov

Keywords:

Avalanche Breakdown, Bipolar Transport, Microwave Generation, Modeling, Monte Carlo Particle, n⁺- n - n⁺ Diodes, Silicon Carbide (SiC), Terahertz Frequency

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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