Paper Titles

Light Emission due to Hot-Electron Direct Transitions in Silicon
p.307

Generation of Donor Centers in p-InSb Laser Radiation
p.311

Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K
p.315

Influence of Composition in GaAs/AlGaAs Heterojunctions on Microwave Detection
p.319

Nature of Ultrafast Recombination in a-Si:H
p.323

Charge Carrier Transport in μc-Si:H
p.327

Study of the Non Linear I-U Characteristic of the Heterostructure α-Si/c-Si
p.333

THz Frequency Power Generation Possibility due to Nonparabolicity in n⁺- n - n⁺ 4H-SiC Structures
p.337

Gunn Effect and THz Frequency Power Generation in n⁺- n - n⁺ GaN Structures
p.341

HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Nature of Ultrafast Recombination in a-Si:H

Nature of Ultrafast Recombination in a-Si:H

Article Preview

Abstract:

You might also be interested in these eBooks

Ultrafast Phenomena in Semiconductors

Info:

Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

323-326

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.323

Citation:

Cite this paper

Online since:

December 1998

Authors:

G. Juška, K. Arlauskas

Keywords:

a-Si:H, Bimolecular Recombination, Random Electric Field

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: