Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K

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Periodical:

Materials Science Forum (Volumes 297-298)

Edited by:

Steponas Asmontas and Adolfas Dargys

Pages:

315-318

DOI:

10.4028/www.scientific.net/MSF.297-298.315

Citation:

P. Moreau et al., "Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K", Materials Science Forum, Vols. 297-298, pp. 315-318, 1999

Online since:

December 1998

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$35.00

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