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Electrical Transport Effects in the Epitaxial La_0.67Ca_0.33MnO₃ Films and La_0.67Ca_0.33MnO₃/(LaNiO₃, RuO₂) Heterostructures
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Light Emission due to Hot-Electron Direct Transitions in Silicon
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Generation of Donor Centers in p-InSb Laser Radiation
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Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K
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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Light Emission due to Hot-Electron Direct...

Light Emission due to Hot-Electron Direct Transitions in Silicon

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

307-310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.307

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Online since:

December 1998

Authors:

Talivaldis Puritis

Keywords:

Avalanche Breakdown, Direct Transitions, Indirect Transitions, Light Emission, Porous Silicon (PS), Secondary Breakdown, Silicon p-n Junction

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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