For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Electric Current Study under Parallel and Perpendicular Directions of Uniaxial Pressure and Strong Electric Field in p-Ge
p.283
Absorptive Fourier Transient Grating Spectroscopy in Indirect Semiconductors and Quantum Structures
p.287
Carrier Capture to Deep Levels in Semi-Insulating InP and GaInP
p.291
Fast Photoresponse in Inhomogeneous Semiconductors under Infrared Laser Excitation
p.295
Two-Temperature Hot Electron-Hole Plasma in Strongly Photoexcited Semiconductors
p.299
Electrical Transport Effects in the Epitaxial La0.67Ca0.33MnO3 Films and La0.67Ca0.33MnO3/(LaNiO3, RuO2) Heterostructures
p.303
Light Emission due to Hot-Electron Direct Transitions in Silicon
p.307
Generation of Donor Centers in p-InSb Laser Radiation
p.311
Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K
p.315

Two-Temperature Hot Electron-Hole Plasma in Strongly Photoexcited Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks
Ultrafast Phenomena in Semiconductors View Preview

Info:

Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

299-302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.299

Citation:

Cite this paper

Online since:

December 1998

Authors:

E. Shatkovskis

Keywords:

Hot Carriers, Narrow-Gap Semiconductors, Strong Photoexcitation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.