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Electric Current Study under Parallel and Perpendicular Directions of Uniaxial Pressure and Strong Electric Field in p-Ge
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Absorptive Fourier Transient Grating Spectroscopy in Indirect Semiconductors and Quantum Structures
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Carrier Capture to Deep Levels in Semi-Insulating InP and GaInP
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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Electric Current Study under Parallel and...

Electric Current Study under Parallel and Perpendicular Directions of Uniaxial Pressure and Strong Electric Field in p-Ge

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.283

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Online since:

December 1998

Authors:

A. A. Abramov, V.I. Akimov, A.T. Dalakyan, V.N. Tulupenko, A.M. Zaitcev, S.N. Danilov, D.A. Firsov, V.A. Shalygin

Keywords:

Crystallographic Direction, Hot Holes, Impurity Levels, Resonant Level, Uniaxial Deformation, Valence Subband

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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