Paper Titles

Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells
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Electron Transport and Heating in Semiconductors with One-Dimensional Superlattice
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Far Infrared Emission and Population Inversion of Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer
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Lattice Strain and Band Offset Determination in ZnSe/ZnS Short-Period Superlattices Grown by MOVPE on (100)GaAs
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Physical Mechanisms for TeraHertz Generation
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Investigations of the High Field Electron Transport Characteristics in Bulk GaAs and InP
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Electric Current Study under Parallel and Perpendicular Directions of Uniaxial Pressure and Strong Electric Field in p-Ge
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Absorptive Fourier Transient Grating Spectroscopy in Indirect Semiconductors and Quantum Structures
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Carrier Capture to Deep Levels in Semi-Insulating InP and GaInP
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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Physical Mechanisms for TeraHertz Generation

Physical Mechanisms for TeraHertz Generation

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

271-278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.271

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Online since:

December 1998

Authors:

E. Starikov, P. Shiktorov, Viktor Gružinskis

Keywords:

A₃B₅, Current Instabilities, Gunn-Oscillators, Hot-Carrier Transport, Microwave Power Generation, Monte-Carlo Simulation, n⁺nn⁺⁺ Structures, Plasma Instabilities, THz Generation, Transferred Electron Devices

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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