Paper Titles

Electron Transport and Heating in Semiconductors with One-Dimensional Superlattice
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Far Infrared Emission and Population Inversion of Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer
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Lattice Strain and Band Offset Determination in ZnSe/ZnS Short-Period Superlattices Grown by MOVPE on (100)GaAs
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Physical Mechanisms for TeraHertz Generation
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Investigations of the High Field Electron Transport Characteristics in Bulk GaAs and InP
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Electric Current Study under Parallel and Perpendicular Directions of Uniaxial Pressure and Strong Electric Field in p-Ge
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Absorptive Fourier Transient Grating Spectroscopy in Indirect Semiconductors and Quantum Structures
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Carrier Capture to Deep Levels in Semi-Insulating InP and GaInP
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Fast Photoresponse in Inhomogeneous Semiconductors under Infrared Laser Excitation
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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Investigations of the High Field Electron...

Investigations of the High Field Electron Transport Characteristics in Bulk GaAs and InP

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

279-282

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.279

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Online since:

December 1998

Authors:

M. Suchecka

Keywords:

Compound Semiconductor, Electron Transport Characteristics, High Field Electron Transport, Hot Electrons, Monte-Carlo Method (MC-Method)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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