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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Far Infrared Emission and Population Inversion of...

Far Infrared Emission and Population Inversion of Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.261

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Online since:

December 1998

Authors:

V.Ya. Aleshkin, A.A. Andronov, A.V. Antonov, N.A. Bekin, A.V. Gavrilenko, V.I. Gavrilenko, D.G. Revin, E.A. Uskova, B.N. Zvonkov, N.B. Zvonkov, W. Knap, J. Lusakowski, Czeslaw Skierbiszewski

Keywords:

Current-Voltage Characteristic, Far Infrared Emission, Hot Holes, Lateral Transport, Population Inversion, Quantum Well, Real Space Transfer, δ-Doping

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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