Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities

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Periodical:

Materials Science Forum (Volumes 297-298)

Edited by:

Steponas Asmontas and Adolfas Dargys

Pages:

53-58

DOI:

10.4028/www.scientific.net/MSF.297-298.53

Citation:

M.S. Kagan et al., "Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities", Materials Science Forum, Vols. 297-298, pp. 53-58, 1999

Online since:

December 1998

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$35.00

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