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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Mobility Edge in Nondegenerate Semiconductor with...

Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities

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Ultrafast Phenomena in Semiconductors

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

53-58

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.53

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Online since:

December 1998

Authors:

M.S. Kagan, E.G. Landsberg, Natalia Zhdanova

Keywords:

Localization, Magnetoresistivity MR, Mobility Edge, Quantum Corrections to the Conductivity

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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