Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 297-298)

Edited by:

Steponas Asmontas and Adolfas Dargys

Pages:

53-58

Citation:

M.S. Kagan et al., "Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities", Materials Science Forum, Vols. 297-298, pp. 53-58, 1999

Online since:

December 1998

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.