Thermoelectric Properties of Sintered SiC Doped with Ge

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Periodical:

Materials Science Forum (Volumes 308-311)

Edited by:

W.A. Kaysser

Pages:

659-664

DOI:

10.4028/www.scientific.net/MSF.308-311.659

Citation:

H. Inai et al., "Thermoelectric Properties of Sintered SiC Doped with Ge", Materials Science Forum, Vols. 308-311, pp. 659-664, 1999

Online since:

May 1999

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Price:

$35.00

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