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HomeMaterials Science ForumMaterials Science Forum Vols. 384-385Energy Relaxation Time and Microwave Noise in...

Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures

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Ultrafast Phenomena in Semiconductors 2001

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Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

117-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.117

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Cite this paper

Online since:

January 2002

Authors:

L. Ardaravičius, J. Liberis, A. Matulionis, B.Ya. Mel'tser, V.A. Soloviev, T.V. Shubina, S.V. Ivanov, P.S. Kop'ev

Keywords:

2DEG, Energy Relaxation, Hot Electrons, InAs/AlSb/GaSb, Microwave Noise

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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