Paper Titles

Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures
p.117

Kinetic Approach to Fluctuation Phenomena: A Historical Outline
p.121

Investigation of Degenerate Carrier Heating in Tunneling GaAs p-n Junction
p.135

Dynamic Negative Differential Conductivity due to Electron Transit Time Effects
p.139

Influence of Hole Recombination Rate on Microwave Detection in Compensated Germanium
p.143

CO₂ Laser Induced Hot Carrier Photoeffect in HgCdTe
p.147

Evaluation of High-Speed Bipolar Transistors for Application to Chaotic Colpitts Oscillator
p.151

RF Noise in a Short-Channel n-MOSFET: A Monte Carlo Study
p.155

Optically Controlled Fast Switching of Microstrip Resonator
p.159

HomeMaterials Science ForumMaterials Science Forum Vols. 384-385Influence of Hole Recombination Rate on Microwave...

Influence of Hole Recombination Rate on Microwave Detection in Compensated Germanium

Article Preview

Abstract:

You might also be interested in these eBooks

Ultrafast Phenomena in Semiconductors 2001

Info:

Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

143-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.143

Citation:

Cite this paper

Online since:

January 2002

Authors:

S. Ašmontas, S. Bumelienė, Jonas Gradauskas, D. Seliuta, Algirdas Sužiedėlis, G. Valušis

Keywords:

Deep Gold Levels in Germanium, Hole Heating, Hole Recombination Rate, Microwave Detection

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: