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HomeMaterials Science ForumMaterials Science Forum Vols. 384-385RF Noise in a Short-Channel n-MOSFET: A Monte...

RF Noise in a Short-Channel n-MOSFET: A Monte Carlo Study

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Ultrafast Phenomena in Semiconductors 2001

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Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.155

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Online since:

January 2002

Authors:

R. Rengel, J. Mateos, D. Pardo, T. González, María Jesús Martín Sánchez

Keywords:

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Monte-Carlo, Noise, RF Analysis, Semiconductor Devices, Simulation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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