Lead-Free Layered Perovskite Film Capacitor for Ferroelectric Random Access Memory

Abstract:

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Periodical:

Edited by:

Hyung Sun Kim, Sang-Yeup Park and Soo Wohn Lee

Pages:

1-6

DOI:

10.4028/www.scientific.net/MSF.439.1

Citation:

U. Chon et al., "Lead-Free Layered Perovskite Film Capacitor for Ferroelectric Random Access Memory", Materials Science Forum, Vol. 439, pp. 1-6, 2003

Online since:

November 2003

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$35.00

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