Study on Grown-in Defects in CZ-Si by Positron Annihilation

Abstract:

• Periodical: Materials Science Forum (Volumes 445-446)
• Pages: 159-161
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.445-446.159
• Online since: January 2004
• Authors: Satoko Nakagawa, Fuminobu Hori, Ryuichiro Oshima
• Keywords: Coincidence Doppler Broadening Measurement, Oxygen-Induced Stacking Faults, Positron Annihilation, Silicon

References

[1] M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito, Proc. Int. Conf. Defect Control in Semicond., (ed. K. Sumino), North-Holland, Amsterdam (1990), p.157.

[2] M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito, Jpn. J. Appl. Phys., 28 (1989), p. L1999.

DOI: 10.1143/jjap.28.l1999

[3] S. Sadamitsu, S. Umeno, Y. Koike, M. Hourai, S. Sumita and T. Shigematu, Jpn. J. Appl. Phys., 32 (1993), p.3675.

DOI: 10.1143/jjap.32.3675

[4] S. Umeno, S. Sadamitsu, H. Murakami, M. Hourai, S. Sumita and T. Shigematu, Jpn. J. Appl. Phys., 32 (1993), p. L699.

DOI: 10.1143/jjap.32.l699

[5] K. Marsden, S. Sadamitsu, M. Hourai, S. Sumita and T. Shigematsu, J. Electrochem. Soc., 142 (1995), p.996.

[6] T.Y. Tan, E.E. Gardner and W.K. Tice, Appl. Phys. Lett. 30 (1077), p.175.

[7] R. Oshima & F. Hori, Advanced Science and Technology of Silicon Materials, Proc. of the 2nd Int. Symp. (1996), p.117.

[8] S. Sadamitsu et al. Jpn. J. Appl. Phys. Vol. 34 (1995), p.2974.

[9] J. Gebauer et al. Appl. Phys. A 68, (1999), p.411.

[10] A. Uedono et al. Jpn. J. Appl. Phys. Vol. 33 (1994), p.1131.

[11] S. Dannefaer: Defect control in semiconductors, ed. K. Sumio (North-Holland, Amsterdam, 1990), p.1561.

[12] S. Dannefear and D. Kerr: J. Appl. Phys. 60 (1986), p.1313.

[13] Z. Tang, T. Nonaka, Y. Nagai and M. Hasegawa, Mater. Sci. Forum Vol. 363-365 (2001).