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HomeMaterials Science ForumMaterials Science Forum Vols. 445-446Slow Positron Beam Investigations of Defects...

Slow Positron Beam Investigations of Defects Caused by B⁺ Implantation into Epitaxial 6H-SiC

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Periodical:

Materials Science Forum (Volumes 445-446)

Pages:

36-38

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.36

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Online since:

January 2004

Authors:

W. Anwand, Gerhard Brauer, Jan Kuriplach, Wolfgang Skorupa

Keywords:

6H-SiC, B⁺ Implantation, Boron Precipitates, Defect Annealing, Slow Positron Implantation Spectroscopy, Vacancy Type Defects

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.433-436.633

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[4] W. Anwand, G. Brauer, P.G. Coleman, W. Skorupa in Proc. MRS Fall Meeting, Boston 1997, Symp. KK, eds. J.C. Barbour, S. Roorda, D. Ila, M. Tsujioka, MRS, Warrendale/PA (1999) 135

[5] http://www.SRIM.org

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