Slow Positron Beam Investigations of Defects Caused by B+ Implantation into Epitaxial 6H-SiC

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Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

36-38

Citation:

W. Anwand et al., "Slow Positron Beam Investigations of Defects Caused by B+ Implantation into Epitaxial 6H-SiC", Materials Science Forum, Vols. 445-446, pp. 36-38, 2004

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January 2004

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