Quenching of Luminescence Emission due to a Transient Bonding State of Donor-Acceptor Pairs at High Excitation Levels in GaAlAs Crystals Doped to Compensation

Abstract:

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A new kind of a bound state has been identified at strong external excitation levels in semiconductors with high amphoteric doping, which is formed of a close donor-acceptor molecule and a neighboring second donor and/or acceptor. The recombination behavior of such a bound state is best described by AUGER-type transitions, reason for which this state is called an AUGER molecule. We have determined the existence region of such molecules in silicon-doped Ga1-xAlxAs with respect to excess carrier density and temperature by means of electron-beam excited luminescence spectroscopy at low and medium temperatures. The donor-acceptor pair radiation intensity is affected in a characteristic manner by the existence of the AUGER molecule state at elevated excitation levels and not too low temperatures. A computerized model calculation of corresponding rate coefficients turns out to be in good agreement with experimental results.

Info:

Periodical:

Materials Science Forum (Volumes 480-481)

Edited by:

A. Méndez-Vilas

Pages:

457-462

DOI:

10.4028/www.scientific.net/MSF.480-481.457

Citation:

A. Zehe et al., "Quenching of Luminescence Emission due to a Transient Bonding State of Donor-Acceptor Pairs at High Excitation Levels in GaAlAs Crystals Doped to Compensation", Materials Science Forum, Vols. 480-481, pp. 457-462, 2005

Online since:

March 2005

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$35.00

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