Quenching of Luminescence Emission due to a Transient Bonding State of Donor-Acceptor Pairs at High Excitation Levels in GaAlAs Crystals Doped to Compensation

Abstract:

A new kind of a bound state has been identified at strong external excitation levels in semiconductors with high amphoteric doping, which is formed of a close donor-acceptor molecule and a neighboring second donor and/or acceptor. The recombination behavior of such a bound state is best described by AUGER-type transitions, reason for which this state is called an AUGER molecule. We have determined the existence region of such molecules in silicon-doped Ga1-xAlxAs with respect to excess carrier density and temperature by means of electron-beam excited luminescence spectroscopy at low and medium temperatures. The donor-acceptor pair radiation intensity is affected in a characteristic manner by the existence of the AUGER molecule state at elevated excitation levels and not too low temperatures. A computerized model calculation of corresponding rate coefficients turns out to be in good agreement with experimental results.

• Periodical: Materials Science Forum (Volumes 480-481)
• Pages: 457-462
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.480-481.457
• Online since: March 2005
• Authors: A. Zehe, E. Reynoso, A. Ramírez
• Keywords: AUGER-Molecule State, Cathodoluminescence, GaAlAs, Non-Radiative Transition

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