Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires
Nanoscale metallic wires play a pivotal role in future microelectronics. Extremely high current densities, present in silicon-based integrated circuits, cause wire destruction by electron-wind induced atomic migration and void formation. In the present paper we elaborate a theoretical model, which describes the interaction of impurity-vacancy pairs. Criteria are given for an optimum material selection, based on the atomic valence of matrix and alloying metal, which reduce (or enhance) the probability of void formation.
A. Zehe et al., "Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires ", Materials Science Forum, Vols. 480-481, pp. 463-468, 2005