Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires

Abstract:

Article Preview

Nanoscale metallic wires play a pivotal role in future microelectronics. Extremely high current densities, present in silicon-based integrated circuits, cause wire destruction by electron-wind induced atomic migration and void formation. In the present paper we elaborate a theoretical model, which describes the interaction of impurity-vacancy pairs. Criteria are given for an optimum material selection, based on the atomic valence of matrix and alloying metal, which reduce (or enhance) the probability of void formation.

Info:

Periodical:

Materials Science Forum (Volumes 480-481)

Edited by:

A. Méndez-Vilas

Pages:

463-468

DOI:

10.4028/www.scientific.net/MSF.480-481.463

Citation:

A. Zehe et al., "Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires ", Materials Science Forum, Vols. 480-481, pp. 463-468, 2005

Online since:

March 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.