Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires

A. Zehe; A. Ramírez; A. Patiño

doi:10.4028/www.scientific.net/MSF.480-481.463

Paper Titles

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Quenching of Luminescence Emission due to a Transient Bonding State of Donor-Acceptor Pairs at High Excitation Levels in GaAlAs Crystals Doped to Compensation
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Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires
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Characterization by Electron Diffraction of Two Thermodynamical Phases of Precipitation in Nb-Microalloyed Steels
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Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires

Abstract:

Nanoscale metallic wires play a pivotal role in future microelectronics. Extremely high current densities, present in silicon-based integrated circuits, cause wire destruction by electron-wind induced atomic migration and void formation. In the present paper we elaborate a theoretical model, which describes the interaction of impurity-vacancy pairs. Criteria are given for an optimum material selection, based on the atomic valence of matrix and alloying metal, which reduce (or enhance) the probability of void formation.