Study of Carbon Films on Silicon Substrates

O. Jašek; M. Eliáš; Z. Frgala; Jiřina Matějková; Antonín Rek; M. Kadlečíková

doi:10.4028/www.scientific.net/MSF.482.203

Paper Titles

Annealing Behaviour of Fe-C-N Nanopowder: Formation of Iron/Graphite Core-Shell Structured Nanoparticles
p.187

Effect of Grain Boundary Segregation on Mechanical Properties of P-Doped Fe-Si Base Alloys
p.191

Influence of Lattice Anisotropy on Models Formulated by Cellular Automata in Presence of Grain Boundary Movement: A Case Study
p.195

Migration of the 45°[100],(001)/(011) Asymmetrical Tilt Grain Boundary in an Fe–6at%Si Alloy
p.199

Study of Carbon Films on Silicon Substrates
p.203

Positron Annihilation Studies of Microstructure of Ultra Fine Grained Metals Prepared by Severe Plastic Deformation
p.207

Experimental Investigation of the Local Deformation Behaviour of MMCs
p.211

Local and Global Fracture Properties in Metal Matrix Composites
p.215

Phase Composition and Microstructure Stability of Al-Ni-Zr Alloys
p.219

HomeMaterials Science ForumMaterials Science Forum Vol. 482Study of Carbon Films on Silicon Substrates

Study of Carbon Films on Silicon Substrates

Abstract:

Carbon based films on silicon substrates have been studied by high resolution FE SEM equipped by an EDS analyzer. The first type are carbon nanotube (CNT) [1] films prepared on Si/SiO2 substrates with Ni or Fe layers by radiofrequency plasma chemical vapor deposition. Dependence of nanotube films properties on Ni and Fe thickness and deposition conditions have been studied. The second type of films discussed are microcrystalline and nanocrystalline diamond films grown on pre-treated Si substrates by microwave plasma chemical vapor deposition (MPCVD). The pre-treatment was varied and its effect on diamond films was studied.