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Characteristics of SnOx-Coated Lithium Manganese Oxide Thin Film for MEMS Power System
Abstract:
We prepared spinel-phase LiMn2O4 layer by using rf magnetron sputtering system. LiMn2O4 films were deposited at room temperature and then annealed at 750°C for crystallization to spinel type. In order to reduce the interface reaction such as Mn dissolution phenomenon during operation, we introduced SnOx (coating-layer) thin film. The SnOx films were deposited on LiMn2O4 films by rf magnetron sputtering system. A SnOx-coated LiMn2O4 film was more stable during the chargingdischarging reaction and maintained good cycle behavior at high temperature conditions of 55°C.
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562-565
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June 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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