An Experimental Study on the Effects of Abrasive Particle Sizes on Polishing Phenomena

Yeau Ren Jeng; Pay Yau Huang

doi:10.4028/www.scientific.net/MSF.505-507.301

Paper Titles

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method
p.277

Modeling Analysis of Excimer Laser Crystallization of a-Si Films with Nanosecond Temperature Response
p.283

Reliability Prediction for 95.5Sn3.9Ag0.6Cu Solder Bump and Thermal Design for Lead Free System in Package with Polymer-Based Material
p.289

Study on Indentation-Sliding Contact Conditions between Semiconductor Terminal and Electrically Testing Probes
p.295

An Experimental Study on the Effects of Abrasive Particle Sizes on Polishing Phenomena
p.301

Parametric Investigation of Laser-Assisted Direct Imprint (LADI) Technique
p.307

Advanced Process Control Expert System of CVD Membrane Thickness Based on Neural Network
p.313

On the Wire Sweep Experiments and Predictions of Gold Wire for Semiconductor Wirebonding Technology
p.319

A Monte Carlo Model for Analyzing the Effects on Radiometric Temperature Measurement in Rapid Thermal Processor
p.325

HomeMaterials Science ForumMaterials Science Forum Vols. 505-507An Experimental Study on the Effects of Abrasive...

An Experimental Study on the Effects of Abrasive Particle Sizes on Polishing Phenomena

Abstract:

The effects of abrasive particle size on polishing phenomena during wafer planarization are investigated using a high precision polishing process test bench with in-situ measurement technology. The present experimental results are found to be comported with the experimental and theoretical data published previously. The current experimental outcomes can help to understand the polishing mechanism and develop the relating theoretical model.

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Materials Science Forum (Volumes 505-507)

Pages:

301-306

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.505-507.301

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Online since:

January 2006

Authors:

Yeau Ren Jeng, Pay Yau Huang

Keywords:

Abrasive Size, Chemical Mechanical Polishing (CMP), Polishing Interfaces, Shear Force, Temperature Rise

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References

[1] S. R. Runnels and L. M. Eyman, J. Electrochem. Soc., 141, 1698 (1994).

Google Scholar

[2] W. T. Tseng and Y. L. Wang, J. Electrochem. Soc., 144, 15 (1997).

Google Scholar

[3] W. T. Tseng, J. H. Chin and L. C. Kang, J. Electrochem. Soc., 146, 1952 (1999).

Google Scholar

[4] Y. R. Jeng and H. R. Tsai, J. Phys. D: Appl. Phys., 35, 1585 (2002).

Google Scholar

[5] Y. R. Jeng and H. J. Tsai, J. Electrochem. Soc., 150, 348(2003).

Google Scholar

[6] Y. R. Jeng, P. Y. Huang and W. C. Pan, J. Electrochem. Soc., 150, 630 (2003).

Google Scholar

[7] M. Bielmann, U. Mahajan and R. K. Singh, Electrochem. Solid-State Lett., 2, 401 (1999).

Google Scholar

[8] R. Xu, G. Smart and M. Zheng, Proc. Fourth Int. Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conf., Santa Clara, CA, 253 (1999).

Google Scholar

[9] T. Izumitani, Treatise on Materials Science and Technology, 17, 115 (1979).

Google Scholar

[10] Y. R. Jeng and P. Y. Huang, Electrochem. Solid-State Lett., 7, G40 (2004).

Google Scholar

[11] Y. R. Jeng and P. Y. Huang, ASME J. Tribology, 127, 190 (2005).

Google Scholar

[12] J. Luo and D. A. Dornfeld, IEEE Trans. Semiconductor Manufacturing, 16, 1 (2003).

Google Scholar

[13] G. Fu, A. Chandre, S. Guha and G. Subhash, IEEE Trans. Semiconductor Manufacturing, 14, 4 (2001).

Google Scholar

[14] A. R. Mazaheri and G. Ahmadi, J. Electrochemical. Soc., 149, G370 (2002).

Google Scholar