Thermal Contact Residual Stress Analysis of Elastic-Plastic Bilayer Micro-Cantilevers with Platinum Electrodes

Abstract:

This paper studies the residual stress distributions and tip deflections of microfabricated bilayer cantilevers of varying beam thickness and platinum electrode length. The bilayer cantilevers discussed here are composed of low-stress silicon nitride films deposited on silicon beams. Platinum electrodes are deposited and patterned on the low-stress silicon nitride layers. A thermal elastic-plastic finite element model is utilized to calculate the residual stress distribution across the cantilever cross-section and to determine the cantilever tip deflection following heat treatment. A contact model is introduced to simulate the influence of contact on the residual stress distribution. The influences of the beam thickness and the platinum electrode length on the residual stress distribution and tip deflections are thoroughly investigated. The numerical results indicate that a smaller beam thickness leads to a larger compressive residual stress within the platinum electrode and delivers a larger tip deflection. The results also indicate that a larger platinum electrode length delivers a smaller tip deflection.

• Periodical: Materials Science Forum (Volumes 505-507)
• Pages: 559-564
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.505-507.559
• Online since: January 2006
• Authors: Li Wen Chen, Chia Yen Lee, Chien Hsiung Tsai, Yung Chuan Chen
• Keywords: Bilayer Cantilever, Platinum Electrode, Residual Stress, Thermal Contact

References

[1] Y. Kuang; Q.A. Huang and N.K.S. Lee. Microsystem Technologies 8, 17 (2002).

[2] T. Kobayashi, Y. Murakoshi and R. Maeda. Microsystem Technologies 10, 423 (2004).

[3] C.T. Chen, H. Nguyen and M.C. Wu. Proc. IEEE MEMS 1999, 424 (1999).

[4] M.A. Helmbrecht, U. Srinivasan, C. Rembe, R.T. Howe and R.S. Muller. Proc. Transducers 2001, 1290 (2001).

[5] C.Y. Lee, G.B. Lee. J Micromech Microeng 13, 620 (2003).

[6] Y. Su, A.G.R. Evans, A.B. Brunnschweiler and G. Ensell. J Micromech Microeng 12, 780 (2002).

[7] W.I. Cho, N.C. Park, H. Yang and Y.P. Park. Microsystem Technologies 8, 139 (2002).

[8] F. Ericson, S. Greek, J. Söderkvist and JÅ Scheweitz. J Micromech Microeng 7, 30 (1997).

[9] S. Petronis, J. Gold and B. Kasemo. J Micromech Microeng 13, 900 (2003).

[10] W. Fang. J Micromech Microeng 9, 230 (1999).

[11] M. Brissaud, L. Sarah and P. Gonnard. J Micromech Microeng 13, 832 (2003).

[12] W. Peng and B. Bhushan. Microsystem Technologies 9, 340 (2003).

[13] T. Cui, D. Markus, S. Zurn and D.L. Polla. Microsystem Technologies 10, 137 (2004).

[14] P.A. Flinn, D.S. Gardner and W.D. Nix. IEEE Transaction on Electron Device ED-34, 689 (1987).

[15] T.C. Hodge, S.A. Bidstrup-Allen and P.A. Kohl. IEEE Transactions on Components, Package, and Manufacturing Technology A-20(2), 241 (1997).

[16] V.K. Pamula, A. Jog and R.B. Fair. Proc Intl Conference on Modeling and Simulation of Microsystems 2001, 410 (2001).

[17] J. Frühauf, E. Gärtner and E. Jänsch. J Micromech Microeng 9, 305 (1999).

[18] G.B. Lee, H.H. Lee and T.T. Chou. Proc Nano and Micro System Conference 2003, 113 (2003).