Growth of ZnO Thin Films by Metalorganic Chemical Vapor Deposition Using Isopropyl Alcohol for Oxygen Precursor

Jae Young Park; Yong Sung Hong; Sang Sub Kim

doi:10.4028/www.scientific.net/MSF.510-511.998

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HomeMaterials Science ForumMaterials Science Forum Vols. 510-511Growth of ZnO Thin Films by Metalorganic Chemical...

Growth of ZnO Thin Films by Metalorganic Chemical Vapor Deposition Using Isopropyl Alcohol for Oxygen Precursor

Abstract:

ZnO thin films were synthesized by metalorganic chemical vapor deposition on Al2O3 (0001) substrates particularly using isopropyl alcohol for oxygen precursor. Change in microstructure was investigated depending on the growth temperature and the O/Zn precursor ratio. Under an optimized condition, ZnO thin films having a very smooth surface and dense cross-sectional microstructure were obtained while possessing epitaxial crystalline alignment. However, the photoluminescent spectrum lacks the band-edge emission.

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Materials Science Forum (Volumes 510-511)

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998-1001

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https://doi.org/10.4028/www.scientific.net/MSF.510-511.998

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Online since:

March 2006

Authors:

Jae Young Park, Yong Sung Hong, Sang Sub Kim

Keywords:

Alcohol Precursor, MOCVD, Morpholoy, ZnO Thin Film

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