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Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells

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Abstract:

InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al.

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Periodical:

Materials Science Forum (Volume 518)

Pages:

17-22

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.518.17

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Online since:

July 2006

Authors:

S. Lazić, J.M. Calleja, R. Hey, K. Ploog

Keywords:

InxGa1-xAs1-yNy Multiquantum Wells, Local Vibration Mode, Resonant Raman Scattering

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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