Indium Tin Oxide (ITO) films were deposited on nonalkali glass substrate by dc magnetron sputtering using high density ITO targets with different conductivitis. Depositions were carried out at total gas pressure (Ptot) of 0.6 Pa, substrate temperature (Ts) of RT, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 3.0 % and dc power of 100W. High conductivity target showed relatively high stability in electrical property with increasing target erosion ratio. Optimum O2 addition ratio to obtain the lowest resistivity was decreased with increasing target erosion ratio. High conductivity ITO target could lead to decrease in micro-nodule formation on the target surface because of high cooling. The decrease in resistivity was observed for the film annealed at H2 introduction or without O2 addition in vacuum, where could be attributed to increase in carrier density.