Life Time Predictions through X-Ray Defect Analysis of MEMS Devices

Abstract:

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In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favor failure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of the SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methods such as the rocking curve method and reciprocal space mapping were used to determine the strain as well as the defect concentration in the crystal. The investigations also include the numerical simulation of deformations.

Info:

Periodical:

Materials Science Forum (Volumes 584-586)

Edited by:

Yuri Estrin and Hans Jürgen Maier

Pages:

518-522

DOI:

10.4028/www.scientific.net/MSF.584-586.518

Citation:

A. Neels et al., "Life Time Predictions through X-Ray Defect Analysis of MEMS Devices", Materials Science Forum, Vols. 584-586, pp. 518-522, 2008

Online since:

June 2008

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Price:

$35.00

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