Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

Agnaldo S. Gonçalves; Ana Flavia Nogueira; Marian R. Davolos; Naruhiko Masaki; Shozo Yanagida; Selma G. Antônio; Carlos de Oliveira Paiva-Santos

doi:10.4028/www.scientific.net/MSF.591-593.13

Paper Titles

Committees

Foreword

Estimative of the Stacking Fault Energy for a FeNi(50/50) Alloy and a 316L Stainless Steel
p.3

The Coercivity Mechanisms in Sm(CoFeCuZr)z Nanocrystalline Magnets: Nucleation x Pinning
p.8

Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells
p.13

Corrosion Resistance and Cytotoxicity Study of 17-4PH Steels Produced by Conventional Metallurgy and Powder Injection Molding
p.18

Ti-13Nb-13Zr Foams for Surgical Implants
p.24

A Comparison between CoNiCrAlY Bond Coat and Zirconia Plasma Sprayed Coatings on Creep Tests
p.30

Porosity Characterization of Sintered Titanium Scaffolds for Surgical Implants
p.36

HomeMaterials Science ForumMaterials Science Forum Vols. 591-593Ga-Modified Nanostructured ZnO: Characterization...

Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

Abstract:

ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga3+, as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.