Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells
ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga3+, as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.
Lucio Salgado and Francisco Ambrozio Filho
A. S. Gonçalves et al., "Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells", Materials Science Forum, Vols. 591-593, pp. 13-17, 2008