Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

Abstract:

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ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga3+, as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.

Info:

Periodical:

Materials Science Forum (Volumes 591-593)

Edited by:

Lucio Salgado and Francisco Ambrozio Filho

Pages:

13-17

DOI:

10.4028/www.scientific.net/MSF.591-593.13

Citation:

A. S. Gonçalves et al., "Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells", Materials Science Forum, Vols. 591-593, pp. 13-17, 2008

Online since:

August 2008

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Price:

$35.00

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