Melt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity

Abstract:

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A brief review is given of the results obtained and published in 2003–2007 by IChPM and IPPE during their joint study and modeling of Ge:Ga, Ge:Sb, GaSb:Te, InP:S single crystal growth from stoichiometric and non-stoichiometric melts on board the Photon satellite series. The use of microgravity is shown to be justified and holding promise for research into the structural self-organization processes (cluster forming) taking place within the transient layer of the melt during the solidification. The mathematical model of convective heat and mass transfer taking into account the dual-phase character of matter in the boundary layers near the interface has been created and used as an independent tool for the study of such processes. Prospects are discussed for this new area of space material science.

Info:

Periodical:

Edited by:

A. Roósz, V. Mertinger, P. Barkóczy and Cs. Hoó

Pages:

29-34

DOI:

10.4028/www.scientific.net/MSF.649.29

Citation:

A.V. Kartavykh and V.P. Ginkin, "Melt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity", Materials Science Forum, Vol. 649, pp. 29-34, 2010

Online since:

May 2010

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$35.00

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