The "EÖTVÖS” Program in Space Research – 1979-1986

Abstract:

A brief historical overview of one of Hungary's space projects on Soviet spacecrafts, the so-called "Eötvös" Project on semiconductor crystal growth, is given. Three experiments were proposed and performed: i) epitaxial growth of GaAs under flux, ii) seedless growth of GaSb, and as a control, iii) seeded growth of an InSb crystal. Because of thermal control problems of the furnace, only the growth of a structurally perfect GaSb bicrystal was a successful novelty. Results of structural and electrical analyses are briefly summarized. Finally, a list of related publications is given.

• Periodical: Materials Science Forum (Volume 649)
• Pages: 11-16
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.649.11
• Online since: May 2010
• Authors: J. Gyulai, I. Gyúró
• Keywords: Crystal Growth, Epitaxial, GaAs, GaSb, InSb

References

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