The "EÖTVÖS” Program in Space Research – 1979-1986

Abstract:

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A brief historical overview of one of Hungary's space projects on Soviet spacecrafts, the so-called "Eötvös" Project on semiconductor crystal growth, is given. Three experiments were proposed and performed: i) epitaxial growth of GaAs under flux, ii) seedless growth of GaSb, and as a control, iii) seeded growth of an InSb crystal. Because of thermal control problems of the furnace, only the growth of a structurally perfect GaSb bicrystal was a successful novelty. Results of structural and electrical analyses are briefly summarized. Finally, a list of related publications is given.

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Periodical:

Edited by:

A. Roósz, V. Mertinger, P. Barkóczy and Cs. Hoó

Pages:

11-16

DOI:

10.4028/www.scientific.net/MSF.649.11

Citation:

J. Gyulai and I. Gyúró, "The "EÖTVÖS” Program in Space Research – 1979-1986", Materials Science Forum, Vol. 649, pp. 11-16, 2010

Online since:

May 2010

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$35.00

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