Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors

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Periodical:

Materials Science Forum (Volumes 65-66)

Edited by:

Gordon Davies

Pages:

141-150

DOI:

10.4028/www.scientific.net/MSF.65-66.141

Citation:

M. Stavola and S. J. Pearton, "Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors", Materials Science Forum, Vols. 65-66, pp. 141-150, 1991

Online since:

January 1991

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$35.00

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