Paper Titles

Excited-State Spectroscopy of Shallow Donor Impurities in GaAs/AlGaAs Multi-Quantum Wells
p.117

Two-Dimensional D^- States in Selectively Doped GaAs-GaAlAs Multi-Quantum Wells
p.123

Infrared Absorption Coefficient for Shallow Donors in a Quantum Well
p.129

Optical Absorption Spectra Associated to Shallow Impurities in GaAs-(Ga,Al)As Quantum Well Wires
p.135

Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors
p.141

Sulfur-Hydrogen Donor Complexes in Silicon
p.151

Photothermal Ionization Studies of Effective Mass-Like Hydrogen-Related Donors in Silicon
p.157

Valence Force Models as a Test of Atomic Models
p.163

Hydrogen-Impurity Complexes in GaAs
p.169

HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Microscopic Properties of Hydrogen Passivated...

Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors

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Shallow Impurities in Semiconductors IV

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

141-150

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.141

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Online since:

January 1991

Authors:

Michael Stavola, Stephen J. Pearton

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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