High-Throughput Evaluation of Crystallization Temperature of Pd-Cu-Si System Using Integrated Thin Film Samples

Yuko Aono; Junpei Sakurai; Akira Shimokohbe; Seiichi Hata

doi:10.4028/www.scientific.net/MSF.654-656.2426

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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656High-Throughput Evaluation of Crystallization...

High-Throughput Evaluation of Crystallization Temperature of Pd-Cu-Si System Using Integrated Thin Film Samples

Abstract:

In this paper, a new high-throughput evaluation method for crystallization temperature (Tx) of thin film amorphous alloy is introduced. For measurement of Tx on integrated thin film samples, thermography is used. The order of one hundred Pd-Cu-Si thin film amorphous samples with different composition are integrated on one chip and measured their Tx at once. The validity of measured Tx are examined by comparing with results of differential scanning calorimeter that is a conventional method for Tx measurement, and equilibrium phase diagram of Pd-Si. As results, the difference of two methods is within 10 K and the trend of Tx map has strong correlation with the phase diagram, respectively.

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Periodical:

Materials Science Forum (Volumes 654-656)

Pages:

2426-2429

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.654-656.2426

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Online since:

June 2010

Authors:

Yuko Aono, Junpei Sakurai, Akira Shimokohbe, Seiichi Hata

Keywords:

Combinatorial Methods, Crystallization Temperature, High-Throughput Evaluation, Thermography, Thin Film Amorphous Alloy, Thin Film Library

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