Effects of Heat Treatment on Growth of BaSi2 Film on Si(111) Substrates

Abstract:

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Semiconducting orthorhombic BaSi2 films were synthesized on Si(111) substrates using magnetron sputtering (MS) and subsequent annealing by interdiffusion between the deposited Ba film and Si(111) substrate. The structural and morphological features of the result films are analysed. The growth mechanism and the evolution of the silicides are discussed. The effects of annealing temperature and annealing time on the growth of the BaSi2 film are studied.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

1273-1276

DOI:

10.4028/www.scientific.net/MSF.663-665.1273

Citation:

Z. Y. Yang et al., "Effects of Heat Treatment on Growth of BaSi2 Film on Si(111) Substrates", Materials Science Forum, Vols. 663-665, pp. 1273-1276, 2011

Online since:

November 2010

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$35.00

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