Trace Addition of Ammonia and Water on the Growth of Cabon Nanotubes Prepared by PECVD Method

Ya Bo Fu; Wen Cai Xu; Dong Li Li

doi:10.4028/www.scientific.net/MSF.663-665.1277

Paper Titles

The Stochastic Resonance of the Single-Mode Laser with the Color Noises Correlation Period Modulation and Signal Modulation
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Preparation and Properties of Cationic Starch with High Degree of Substitution
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Preparation of Starch Polyacrylamide Graft Copolymer and its Application in Paper Packaging Material
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Effects of Heat Treatment on Growth of BaSi₂ Film on Si(111) Substrates
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Trace Addition of Ammonia and Water on the Growth of Cabon Nanotubes Prepared by PECVD Method
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Thermal Expansion Property of P₂O₅ Doped Lithium Aluminosilicate Glass-Ceramic Synthesized by Sol-Gel Process
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Effect of Heat Treatment Conditions on Microstructure and Infrared Transmission Property of Germanate Oxyfluoride Glass-Ceramics
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Syntheses and Thermo-Decomposition Process of the Co-Doping VO₂(M) Precursor
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Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering
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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Trace Addition of Ammonia and Water on the Growth...

Trace Addition of Ammonia and Water on the Growth of Cabon Nanotubes Prepared by PECVD Method

Abstract:

A new way was developed to grow carbon nanotubes (CNTs) in the downstream zone of high pressure dielectric barrier discharge plasma. Using Ni coated Si as the catalyzed substrate, CH4 as the carbon source, H2, NH3 and water vapor mixtures as the dilution and etching gas, CNTs were grown under temperatures of 630oC and 750 oC. The effects of various etching gas mixtures on the growth of CNTs were investigated respectively. The CNTs were characterized by SEM and high-resolution TEM. The results show that trace addition of Ammonia and water vapor to the plasma atmospheres can influence CNTs growth strongly. In 15% CH4 gas mixtures, CNTs can grown well within an addition of 3% NH3 which showed an improvement of CNTs quality, but no product was founded when adding the NH3 content over 8%. On the contrary, in 15% CH4 and 8% NH3 gas mixtures, CNTs can grow better when adding a small proportion (2‰-6‰) of water vapor to the etching gas and meanwhile optical emission spectrometry (OES) was applied to diagnositic and explain the effects of trace water vapor on the process of CNTs growth.