Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method

Fu Ru Zhong; Xiao Yi Lv; Zhen Hong Jia

doi:10.4028/www.scientific.net/MSF.663-665.393

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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Preparation and Characterization of ZnS/ZnO...

Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method

Abstract:

We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

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Materials Science Forum (Volumes 663-665)

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393-396

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https://doi.org/10.4028/www.scientific.net/MSF.663-665.393

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November 2010

Authors:

Fu Ru Zhong, Xiao Yi Lv, Zhen Hong Jia

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Energy Dispersive Spectroscopy, Photoluminescence (PL), Porous Silicon (PS)

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