Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method
We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.
Yuan Ming Huang
F. R. Zhong et al., "Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method", Materials Science Forum, Vols. 663-665, pp. 393-396, 2011