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Hetero-Epitaxial Defects and Optical Characteristics of SiCGe Layers Grown on 6H-SiC Substrate

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Abstract:

By means of SEM, TEM, UV-VIS optical transmission spectra and photoluminescence spectra tests, hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate were studied. SEM and TEM images have shown that the SiCGe were grown in layer-by-layer mode with APD and DPB defects which were caused by the thermal and lattice mismatches between SiCGe and SiC. Transmission spectra results have shown the calculated band gap of the SiCGe layer was 2.31eV. Room temperature photoluminescence spectra have shown that the peak wavelength and the FWHM of SiCGe layer were closely related to its Ge contents and the hetero-epitaxial defects.

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Periodical:

Materials Science Forum (Volumes 663-665)

Pages:

445-448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.445

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Online since:

November 2010

Authors:

Tao Lin, Nan Lin, Lian Bi Li, Chen Yang, Hong Bin Pu, Zhi Ming Chen

Keywords:

Photoluminescence (PL), SiCGe, Silicon Carbide (SiC)

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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