Hetero-Epitaxial Defects and Optical Characteristics of SiCGe Layers Grown on 6H-SiC Substrate

Abstract:

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By means of SEM, TEM, UV-VIS optical transmission spectra and photoluminescence spectra tests, hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate were studied. SEM and TEM images have shown that the SiCGe were grown in layer-by-layer mode with APD and DPB defects which were caused by the thermal and lattice mismatches between SiCGe and SiC. Transmission spectra results have shown the calculated band gap of the SiCGe layer was 2.31eV. Room temperature photoluminescence spectra have shown that the peak wavelength and the FWHM of SiCGe layer were closely related to its Ge contents and the hetero-epitaxial defects.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

445-448

DOI:

10.4028/www.scientific.net/MSF.663-665.445

Citation:

T. Lin et al., "Hetero-Epitaxial Defects and Optical Characteristics of SiCGe Layers Grown on 6H-SiC Substrate", Materials Science Forum, Vols. 663-665, pp. 445-448, 2011

Online since:

November 2010

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$35.00

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