Electron Mobility Model for Strained-Si/(001) Si1-XGex

Jiu Hua An; He Ming Zhang; Jian Jun Song; Xiao Yan Wang

doi:10.4028/www.scientific.net/MSF.663-665.477

Paper Titles

Protonation Degree of Doped Polyaniline with Sulfosalicylic Acid as Function of the Synthetic Method
p.462

Controllable Spin-Polarization of Electronic Transport through a Magnetic Quantum Dot in the Influence of Microwave Field
p.466

Intrinsic Carrier Concentration in Strained Si_1-XGe_x/(101)Si
p.470

Electrochemical Characteristics of Lanthanum Hexaboride in the Environments Containing S^2-
p.473

Electron Mobility Model for Strained-Si/(001) Si_1-XGe_x
p.477

Synthesis and Properties of Conducting Polyaniline by Co-Doping with Sulfosalicylic Acid and Sulfate Acid
p.481

Template-Free Synthesis of CuInS₂ Hollow Nanospheres
p.486

Comparison of Bonding of Bulk PZT to Silicon by Intermediate Glass Layer and by Intermediate Au Layer
p.490

Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer
p.494

HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Electron Mobility Model for Strained-Si/(001)...

Electron Mobility Model for Strained-Si/(001) Si_1-XGe_x

Abstract:

There has been much interest in the Si-based strained technology lately. The improvement of strained-Si device performance is due to the enhancement of the mobility, so the further study on mobility is essential in both theory and practice aspects. In this paper, an analytical model of the electron mobility of strained-Si material, such as biaxial tensile strained-Si material grown on relaxed Si1-xGex (0≤x≤0.6) substrates, as a function of strain and different orientations is obtained. The results show that the electron mobilities for [100] and [010] orientations increase rapidly with increasing Ge fraction x, and there is no electron mobility enhancement for [001] orientation in comparison to relaxed Si material.