Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

Abstract:

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An n-SiC/p-SiCGe/n-SiCGe heterojunction phototransistor with charge compensation layer has been simulated with commercial simulator MEDICI. With wide bandgap SiC emitter and p-type SiCGe charge-compensation layer, device responsivity and breakdown voltage has been improved. It is found that with p-type SiCGe layer, the responsivity is nearly two times of without one. Furthermore, flat electrical field distribution during off-state enable it supports higher reverse bias, thus breakdown voltage increased from 450V to 580V for the given structure, and both breakdown voltage and responsivity increase with light absorption region length.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

494-497

DOI:

10.4028/www.scientific.net/MSF.663-665.494

Citation:

L. Cao et al., "Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer", Materials Science Forum, Vols. 663-665, pp. 494-497, 2011

Online since:

November 2010

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Price:

$35.00

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