Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

Lin Cao; Hong Bin Pu; Zhi Ming Chen; Tao Lin; Shao Jiang Zhou

doi:10.4028/www.scientific.net/MSF.663-665.494

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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Evidence of Responsivity and Breakdown Voltage...

Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

Abstract:

An n-SiC/p-SiCGe/n-SiCGe heterojunction phototransistor with charge compensation layer has been simulated with commercial simulator MEDICI. With wide bandgap SiC emitter and p-type SiCGe charge-compensation layer, device responsivity and breakdown voltage has been improved. It is found that with p-type SiCGe layer, the responsivity is nearly two times of without one. Furthermore, flat electrical field distribution during off-state enable it supports higher reverse bias, thus breakdown voltage increased from 450V to 580V for the given structure, and both breakdown voltage and responsivity increase with light absorption region length.

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Periodical:

Materials Science Forum (Volumes 663-665)

Pages:

494-497

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.494

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Online since:

November 2010

Authors:

Lin Cao, Hong Bin Pu, Zhi Ming Chen, Tao Lin, Shao Jiang Zhou

Keywords:

Charge-Compensation, Heterojunction Phototransistor, Responsivity, SiCGe/SiC

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