Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer

Abstract:

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The switching character of SiCGe/SiC heterojunction phototransistors with charge-compensation technique has been simulated with commercial simulator MEDICI. The influences of light power density, wavelength and carrier lifetime on switching characters were studied. Simulation result shown that the devices are latch-free device and fall time is much longer than rise time. The increasing of light power density and wavelength cause shorter rise time and longer fall time unless reaches SiCGe absorption edge 520nm, trade-off must made between responsivity and switching speed when carrier lifetime is considered, the ratio of them gets it maximum values at minority carrier lifetime equal 90ns.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

498-501

DOI:

10.4028/www.scientific.net/MSF.663-665.498

Citation:

H. B. Pu et al., "Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer", Materials Science Forum, Vols. 663-665, pp. 498-501, 2011

Online since:

November 2010

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Price:

$35.00

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