Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer

Hong Bin Pu; Lin Cao; Zhi Ming Chen; Tao Lin; Shao Jiang Zhou

doi:10.4028/www.scientific.net/MSF.663-665.498

Paper Titles

Synthesis and Properties of Conducting Polyaniline by Co-Doping with Sulfosalicylic Acid and Sulfate Acid
p.481

Template-Free Synthesis of CuInS₂ Hollow Nanospheres
p.486

Comparison of Bonding of Bulk PZT to Silicon by Intermediate Glass Layer and by Intermediate Au Layer
p.490

Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer
p.494

Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer
p.498

Analysis on the Characteristics of Transient Signal Transmission Based on GaAs Materials
p.502

Influence of Fe Doping on the Oxygen-Ion Diffusion and Electrical Conduction of La_1.95K_0.05Mo_2-XFex_O9-δ
p.506

An Interesting Result of Dielectric Property for Novel Polyimides with Fluorene Groups
p.511

Crystal Structure and Microwave Dielectric Properties of Ca[(Li_1/3Nb_2/3) _0.92Zr_0.08]O_3-δ−xTiO₂ Ceramics
p.515

HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Switching Characters of SiCGe/SiC Heterojunction:...

Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer

Abstract:

The switching character of SiCGe/SiC heterojunction phototransistors with charge-compensation technique has been simulated with commercial simulator MEDICI. The influences of light power density, wavelength and carrier lifetime on switching characters were studied. Simulation result shown that the devices are latch-free device and fall time is much longer than rise time. The increasing of light power density and wavelength cause shorter rise time and longer fall time unless reaches SiCGe absorption edge 520nm, trade-off must made between responsivity and switching speed when carrier lifetime is considered, the ratio of them gets it maximum values at minority carrier lifetime equal 90ns.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Pages:

498-501

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.498

Citation:

Cite this paper

Online since:

November 2010

Authors:

Hong Bin Pu, Lin Cao, Zhi Ming Chen, Tao Lin, Shao Jiang Zhou

Keywords:

Charge-Compensation, MEDICI, Responsivity, SiCGe/SiC, Switching Character

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J.R. Todd, IEEE National Aerospace and Electronics Conference, Vol. 2 (1992), p.456.

Google Scholar

[2] J.H. Hur, P. Hadizad, S.R. Hummel, P.D. Dapkus, H.R. Fetterman and M.A. Gundersen: 19th IEEE Power Modulator Symposium, (1990), p.325.

DOI: 10.1109/modsym.1990.200976

Google Scholar

[3] J.H. Zhao, T. Burke, D. Larson, M. Weiner, A. Chin, J.M. Ballingal and T.H. Yu: IEEE Transactions on Electron Device, Vol. 40 (1993), p.817.

Google Scholar

[4] R.J. Lis, J.H. Zhao, L.D. Zhu, J. Illan, S. McAfee, T. Burke, M. Weiner, W.R. Buchwald and K.A. Jones: IEEE Transactions on Electron Devices, Vol. 41 (1994), p.809.

DOI: 10.1109/16.285035

Google Scholar

[5] Z. Lv, Z.M. Chen and H.B. Pu: Chinese Phys. Vol. 14 (2005), p.1255.

Google Scholar

[6] H.B. Pu, L. Cao and J. Ren: Journal of Semiconductors Vol. 31 (2010), p.400.

Google Scholar

[7] H. Kroemer: Proc. IRE Vol. 45 (1957), p.1535.

Google Scholar

[8] P. M. Shenoy, A. Bhalia and G. M. Dolny: IEEE ISPSD Proceedings (1999), p.99.

Google Scholar

[9] P. Alto: MEDICI 4. 0 User's Manual CA (TMA Inc., 2001).

Google Scholar

[10] A. Khan Hassan and A. Ali: Rezazadeh, Suba C. Subramaniam, Proceedings of the 3rd European Microwave Integrated Circuits Conference (2008), p.346.

Google Scholar